23AA02M
Microchip Technology 23AA02M 2Mb SPI/SDI/SQI SRAM Microchip Technology 23AA02M and 23LCV02M 2Mb SPI/SDI/SQI SRAM is a random access memory device that can be accessed through a serial peripheral interface (SPI) compatible bus. The SRAM features 2048K bits of low power and single voltage read/write operation. The device supports dual serial interface (SDI) and quad serial interface (SQI) for faster data transfer rates and 143MHz high-speed clock frequency. The SRAM provides built-in error correction code (ECC) logic to ensure high reliability. Microchip Technology 23AA02M and 23LCV02M 2Mb SPI/SDI/SQI SRAM provides 256 x 8-bit organization with byte, page, and sequential read and write modes. The SRAM has unlimited read and write cycles and supports external battery backup. These devices are ha...
描述
Microchip Technology 23AA02M 2Mb SPI/SDI/SQI SRAM
Microchip Technology 23AA02M and 23LCV02M 2Mb SPI/SDI/SQI SRAM is a random access memory device that can be accessed through a serial peripheral interface (SPI) compatible bus. The SRAM features 2048K bits of low power and single voltage read/write operation. The device supports dual serial interface (SDI) and quad serial interface (SQI) for faster data transfer rates and 143MHz high-speed clock frequency. The SRAM provides built-in error correction code (ECC) logic to ensure high reliability. Microchip Technology 23AA02M and 23LCV02M 2Mb SPI/SDI/SQI SRAM provides 256 x 8-bit organization with byte, page, and sequential read and write modes. The SRAM has unlimited read and write cycles and supports external battery backup. These devices are halogen-free and RoHS compliant.characteristic
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2048K-bit Low Power SRAM
Single Voltage Read and Write Operation:1.7V to 3.6V (23AA02M)
2.2V to 3.6V (23LCV02M)
Serial Interface ArchitectureCompatible with SPI Modes 0 and 3
Supports SDI and SQI
High-speed clock rate of 143 MHz
Built-in Error Correction Code (ECC) logic for high reliability
Low Power
Maximum active read current for SPI/SDI/SQI is 3mA (at 40MHz, 3.6V)
Standby Current: 70µA (typical at +25°C)
Unlimited Read and Write Cycles
External Battery Backup Support
Zero Write Time
Structure
256 x 8 bits
User-selectable 32-byte or 256-byte page size
Byte, Page and Sequential modes for read and write
Packaging Options
8-pin PDIP, 8-pin SOIC and 8-pin TSSOP
14-pin PDIP, 14-pin SOIC and 14-pin TSSOP
Halogen-free, RoHS compliant
specification
- Absolute voltage rating: 3.9Vcc
Active read current (max): 3 mA
Standby current: 70μA (typ)
256K x 8 memory organization
About all inputs and outputs: -0.3V to VCC+0.3V
Maximum clock frequency: 143 MHz
Input capacitance: 7 pF
2 kV ESD protection
Ambient temperature range: -40 °C to +85 °C
Storage temperature range: -65°C +150°C
