Micron 176-layer NAND Universal Flash Storage (UFS) 3.1
Micron 176-layer NAND Universal Flash Storage (UFS) 3.1 is an ultra-fast flash memory solution based on 3D replacement gate technology optimized for high-end and flagship mobile phones. Compared with the previous generation 96-layer products, 176-layer UFS 3.1 can achieve up to 75% improvement in sequential write and random read performance, unlocking the potential of 5G - downloading a 2-hour 4K movie in just 9.6 seconds. Micron 176-layer UFS 3.1 has a compact design, which is ideal for the high capacity and small size required by mobile devices. Micron 176-layer NAND UFS 3.1 is available in 128GB, 256GB, 512GB, 1TB and 2TB capacities.

Features
Improved performance - 75% improvement in sequential writes and 70% improvement in random reads compared to previous 96-layer products
Twice as many total bytes written as previous 96-layer products; twice as much total data storage without sacrificing device reliability
Faster downloads - Ability to download a 10-minute 4K (2160-pixel) YouTube video stream in 0.7 seconds or a 2-hour 4K movie in 9.6 seconds
Smoother mobile experience - 10% lower latency, faster response times and more reliable mobile experience compared to previous 96-layer products

Applications
Mobile devices
Automotive
Customer segments
Consumer electronics
Data centers
Flash memory for workloads such as data lakes, artificial intelligence, and big data analytics